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Mono Wafer
Release date:2018-03-30
Growth Method CZ
Conductive Type P
Dopant :Boron(B) Boron(B)
Orientation 100 +/-3°
Off Orientation <±3°
Resistivity(ρ) 1-3 Ω•cm/3-6Ω•cm
Minority Carrier Lifetime(τd) >1.0 μS
Oxygen Content (Oi) ≤1.0*1018at/cm3
Carbon Content(C) ≤5.0*1016at/cm3
Disicoation Density(Nd) ≤3000/ cm2
Size 156.75*156.75±0.25mm
Diagonal 210±0.25 mm
Thickness 186±20μm
TTV

<30μm

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