Solar Wafer
Growth Method | CZ |
Conductive Type | P |
Dopant :Boron(B) | Boron(B) |
Orientation | 100 +/-3° |
Off Orientation | <±3° |
Resistivity(ρ) | 1-3 Ω•cm/3-6Ω•cm |
Minority Carrier Lifetime(τd) | >1.0 μS |
Oxygen Content (Oi) | ≤1.0*1018at/cm3 |
Carbon Content(C) | ≤5.0*1016at/cm3 |
Disicoation Density(Nd) | ≤3000/ cm2 |
Size | 156.75*156.75±0.25mm |
Diagonal | 210±0.25 mm |
Thickness | 186±20μm |
TTV |
<30μm |
Conductive Type | P |
Dopant :Boron(B) | Boron(B) |
Off Orientation | <±3° |
Resistivity(ρ) | 1-3Ω•cm |
Minority Carrier Lifetime(τd) | >1.2μS |
Oxygen Content (Oi) | ≤4.5*1017at/cm3 |
Carbon Content(C) | ≤6.65*1017at/cm3 |
Disicoation Density(Nd) | ≤3000/ cm2 |
Size | 156.75*156.75±0.25mm |
Diagonal | 219.6-221 mm |
Thickness | 200±20μm |
TTV | <30μm |
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