Solar Wafer   

• 

  Mono Wafer

  Growth Method	CZ
  Conductive Type	P
  Dopant :Boron(B)	Boron(B)
  Orientation	100 +/-3°
  Off Orientation	<±3°
  Resistivity（ρ）	1-3 Ω•cm/3-6Ω•cm
  Minority Carrier Lifetime(τd)	>1.0 μS
  Oxygen Content (Oi)	≤1.0*1018at/cm3
  Carbon Content(C)	≤5.0*1016at/cm3
  Disicoation Density（Nd）	≤3000/ cm2
  Size	156.75*156.75±0.25mm
  Diagonal	210±0.25 mm
  Thickness	186±20μm
  TTV	<30μm

• 

  Poly Wafer

  Conductive Type	P
  Dopant :Boron(B)	Boron(B)
  Off Orientation	<±3°
  Resistivity（ρ）	1-3Ω•cm
  Minority Carrier Lifetime(τd)	>1.2μS
  Oxygen Content (Oi)	≤4.5*1017at/cm3
  Carbon Content(C)	≤6.65*1017at/cm3
  Disicoation Density（Nd）	≤3000/ cm2
  Size	156.75*156.75±0.25mm
  Diagonal	219.6-221 mm
  Thickness	200±20μm
  TTV	<30μm

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