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Solar Wafer   

  • Mono Wafer

    Growth Method CZ
    Conductive Type P
    Dopant :Boron(B) Boron(B)
    Orientation 100 +/-3°
    Off Orientation <±3°
    Resistivity(ρ) 1-3 Ω•cm/3-6Ω•cm
    Minority Carrier Lifetime(τd) >1.0 μS
    Oxygen Content (Oi) ≤1.0*1018at/cm3
    Carbon Content(C) ≤5.0*1016at/cm3
    Disicoation Density(Nd) ≤3000/ cm2
    Size 156.75*156.75±0.25mm
    Diagonal 210±0.25 mm
    Thickness 186±20μm
    TTV

    <30μm

  • Poly Wafer

    Conductive Type P
    Dopant :Boron(B) Boron(B)
    Off Orientation <±3°
    Resistivity(ρ) 1-3Ω•cm
    Minority Carrier Lifetime(τd) >1.2μS
    Oxygen Content (Oi) ≤4.5*1017at/cm3
    Carbon Content(C) ≤6.65*1017at/cm3
    Disicoation Density(Nd) ≤3000/ cm2
    Size 156.75*156.75±0.25mm
    Diagonal 219.6-221 mm
    Thickness 200±20μm
    TTV <30μm

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