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Solar Wafer   

  • Poly Wafer

    Conductive Type P
    Dopant :Boron(B) Boron(B)
    Orientation
    Off Orientation <±3°
    Resistivity(ρ) 1-3Ω•cm
    Minority Carrier Lifetime(τd) >2μS
    Oxygen Content (Oi) ≤1.0*1018at/cm3
    Carbon Content(C) ≤5.0*1016at/cm3
    Disicoation Density(Nd) ≤3000/ cm2
    Size 156*156±0.5mm
    Diagonal 218±0.5 mm
    Thickness 200±20μm
    TTV <30μm

  • Mono Wafer

    Growth Method CZ
    Conductive Type P
    Dopant :Boron(B) Boron(B)
    Orientation
    Off Orientation <±3°
    Resistivity(ρ) 1-3Ω•cm/3-6Ω•cm
    Minority Carrier Lifetime(τd) >10μS
    Oxygen Content (Oi) ≤1.0*1018at/cm3
    Carbon Content(C) ≤5.0*1016at/cm3
    Disicoation Density(Nd) ≤3000/ cm2
    Size 125*125±0.5mm; 156*156±0.5mm
    Diagonal 150±0.5 mm; 156±0.5 mm; 165±0.5 mm; 200±0.5 mm
    Thickness 200±20μm
    TTV <30μm

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